Invention Application
- Patent Title: PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME
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Application No.: US15401385Application Date: 2017-01-09
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Publication No.: US20170115571A1Publication Date: 2017-04-27
- Inventor: Keita KATO , Keiyu OU , Michihiro SHIRAKAWA , Akiyoshi GOTO
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2014-158046 20140801
- Main IPC: G03F7/09
- IPC: G03F7/09 ; G03F7/039 ; G03F7/40 ; G03F7/32 ; G03F7/095 ; G03F7/16 ; G03F7/30 ; G03F7/038 ; G03F7/20

Abstract:
A pattern forming method includes (A) a step of forming a first resist film on a substrate by using a first resist composition, (B) a step of exposing the first resist film, (C) a step of forming a first pattern by developing the exposed first resist film, (D) a step of forming a planarization layer on the substrate provided with the first pattern by using composition for forming a planarization layer (a), (E) a step of forming a second resist film on the planarization layer by using a second resist composition, (F) a step of exposing the second resist film, and (G) a step of forming a second pattern by developing the exposed second resist film in this order, in which the first pattern is insoluble in the composition for forming the planarization layer (a), and a method for manufacturing an electronic device using the pattern forming method.
Information query
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