Invention Application
- Patent Title: METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH INTERCONNECT STRUCTURE
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Application No.: US15394620Application Date: 2016-12-29
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Publication No.: US20170110367A1Publication Date: 2017-04-20
- Inventor: Che-Cheng CHANG , Chih-Han LIN
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
A method includes a first metal layer formed over a substrate and a dielectric layer formed over the first metal layer. The method includes an adhesion layer formed in the dielectric layer and over the first metal layer, and the adhesion layer is a discontinuous layer. The method includes a second metal layer formed in the dielectric layer, and the adhesion layer is formed between the second metal layer and the dielectric layer. The second metal layer includes a via portion and a trench portion over the via portion, and the trench portion is wider than the via portion.
Public/Granted literature
- US09911645B2 Method for forming fin field effect transistor (FinFET) device structure with interconnect structure Public/Granted day:2018-03-06
Information query
IPC分类:
