- 专利标题： Elevated Photodiode with a Stacked Scheme
-
申请号： US15378906申请日： 2016-12-14
-
公开(公告)号： US20170092679A1公开(公告)日： 2017-03-30
- 发明人: Meng-Hsun Wan , Yi-Shin Chu , Szu-Ying Chen , Pao-Tung Chen , Jen-Cheng Liu , Dun-Nian Yaung
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L27/146
- IPC分类号： H01L27/146 ; H04N5/378
摘要：
A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.
公开/授权文献
- US10062721B2 Elevated photodiode with a stacked scheme 公开/授权日：2018-08-28
信息查询
IPC分类:
