- 专利标题： Elevated photodiode with a stacked scheme
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申请号： US15378906申请日： 2016-12-14
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公开(公告)号： US10062721B2公开(公告)日： 2018-08-28
- 发明人: Meng-Hsun Wan , Yi-Shin Chu , Szu-Ying Chen , Pao-Tung Chen , Jen-Cheng Liu , Dun-Nian Yaung
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L31/062
- IPC分类号： H01L31/062 ; H01L31/113 ; H01L27/146 ; H01L31/0352 ; H01L31/18 ; H01L31/0224 ; H01L31/0376 ; H04N5/378
摘要：
A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.
公开/授权文献
- US20170092679A1 Elevated Photodiode with a Stacked Scheme 公开/授权日：2017-03-30
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