Invention Application
US20170062224A1 Methods of Depositing Metal Films Using Metal Oxyhalide Precursors
审中-公开
金属氧化物前体沉积金属膜的方法
- Patent Title: Methods of Depositing Metal Films Using Metal Oxyhalide Precursors
- Patent Title (中): 金属氧化物前体沉积金属膜的方法
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Application No.: US15234448Application Date: 2016-08-11
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Publication No.: US20170062224A1Publication Date: 2017-03-02
- Inventor: Xinyu Fu , David Knapp , David Thompson , Jeffrey W. Anthis , Mei Chang
- Applicant: Applied Materials, Inc.
- Main IPC: H01L21/285
- IPC: H01L21/285 ; C23C16/455 ; C23C16/08
Abstract:
Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.
Public/Granted literature
- US10121671B2 Methods of depositing metal films using metal oxyhalide precursors Public/Granted day:2018-11-06
Information query
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