发明申请
- 专利标题： Magnetoresistive Random Access Memory Device and Method of Manufacturing the Same
- 专利标题（中）： 磁阻随机存取存储器件及其制造方法
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申请号： US15146355申请日： 2016-05-04
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公开(公告)号： US20170054070A1公开(公告)日： 2017-02-23
- 发明人: Jung-Hoon Bak , Myoung-Su Son , Jae-Chul Shim , Gwan-Hyeob Koh , Yoon-Jong Song
- 申请人： Jung-Hoon Bak , Myoung-Su Son , Jae-Chul Shim , Gwan-Hyeob Koh , Yoon-Jong Song
- 优先权： KR10-2015-0116550 20150819
- 主分类号： H01L43/02
- IPC分类号： H01L43/02 ; H01L43/10 ; H01L43/12 ; H01L43/08
摘要：
In a method of manufacturing an MRAM device, a memory unit including a lower electrode, an MTJ structure and an upper electrode sequentially stacked is formed on a substrate. A protective layer structure including a capping layer, a sacrificial layer and an etch stop layer sequentially stacked is formed on the substrate to cover the memory unit. An insulating interlayer is formed on the protective layer structure. The insulating interlayer is formed to form an opening exposing the protective layer structure. The exposed protective layer structure is partially removed to expose the upper electrode. A wiring is formed on the exposed upper electrode to fill the opening.
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