发明申请
US20160358853A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
审中-公开
制造半导体器件和半导体器件的方法
- 专利标题： METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件和半导体器件的方法
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申请号： US15238471申请日： 2016-08-16
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公开(公告)号： US20160358853A1公开(公告)日： 2016-12-08
- 发明人: Ayaka OKUMURA , Katsuhiko HOTTA , Yoshinori KONDO , Hiroaki OSAKA
- 申请人： Renesas Electronics Corporation
- 优先权： JP2014-005373 20140115
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L23/532 ; H01L27/088 ; H01L23/528 ; H01L21/02 ; H01L23/00
摘要：
A semiconductor device includes a silicon nitride film formed above a front surface side of a semiconductor substrate, a first wiring formed above the silicon nitride film, a second wiring containing aluminum formed over the first wiring via a first insulating film, a second insulating film having an opening over the second wiring, and aluminum nitride formed over the second wiring at a bottom surface of the opening.
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