发明申请
- 专利标题： METHOD OF CUTTING CONDUCTIVE PATTERNS
- 专利标题（中）： 切割导电图案的方法
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申请号： US15189311申请日： 2016-06-22
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公开(公告)号： US20160320706A1公开(公告)日： 2016-11-03
- 发明人: Chin-Hsiung HSU , Huang-Yu CHEN , Tsong-Hua OU , Wen-Hao CHEN
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G06F17/50 ; G03F1/70 ; H01L21/3213
摘要：
A method includes patterning a layer over a substrate with a first metal pattern; using a cut mask in a first position relative to the substrate to perform a first cut patterning for removing material from a first region within the first pattern; and using the same cut mask to perform a second cut patterning while in a second position relative to the same layer over the substrate, for removing material from a second region in a second metal pattern of the same layer over the substrate.
公开/授权文献
- US10509322B2 Method of cutting conductive patterns 公开/授权日：2019-12-17
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