Invention Application
US20160276576A1 STT-MRAM DESIGN ENHANCED BY SWITCHING CURRENT INDUCED MAGNETIC FIELD
有权
通过切换电流感应磁场增强STT-MRAM设计
- Patent Title: STT-MRAM DESIGN ENHANCED BY SWITCHING CURRENT INDUCED MAGNETIC FIELD
- Patent Title (中): 通过切换电流感应磁场增强STT-MRAM设计
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Application No.: US15170851Application Date: 2016-06-01
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Publication No.: US20160276576A1Publication Date: 2016-09-22
- Inventor: William H. XIA , Wenqing WU , Kendrick H. YUEN , Abhishek BANERJEE , Xia LI , Seung H. KANG , Jung Pill KIM
- Applicant: QUALCOMM Incorporated
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/08 ; G11C11/16 ; H01L43/12
Abstract:
A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.
Public/Granted literature
- US09799824B2 STT-MRAM design enhanced by switching current induced magnetic field Public/Granted day:2017-10-24
Information query
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