Invention Application
- Patent Title: Radiation Source and Method for Lithography
- Patent Title (中): 放射源和光刻方法
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Application No.: US14442415Application Date: 2013-10-23
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Publication No.: US20160274467A1Publication Date: 2016-09-22
- Inventor: Hendrikus Gijsbertus SCHIMMEL , Michel RIEPEN , Reinier Theodorus Martinus JULISEN , Dennis DE GRAAF
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- International Application: PCT/EP2013/072124 WO 20131023
- Main IPC: G03F7/20
- IPC: G03F7/20 ; H05G2/00

Abstract:
A radiation source suitable for providing radiation to a lithographic apparatus generates radiation from a plasma (12) generated from a fuel (31) within an enclosure comprising a gas. The plasma generates primary fuel debris collected as a fuel layer on a debris-receiving surface ((33a), (33b)). The debris-receiving surface is heated to a temperature to maintain the fuel layer as a liquid, and to provide a reduced or zero rate of formation gas bubbles within the liquid fuel layer in order to reduce contamination of optical surfaces (14) by secondary debris arising from gas bubble eruption from the liquid fuel layer. Additionally or alternatively, the radiation source may have a debris receiving surface positioned and/or oriented such that substantially all lines normal to the debris receiving surface do not intersect an optically active surface of the radiation source.
Public/Granted literature
- US10095119B2 Radiation source and method for lithography Public/Granted day:2018-10-09
Information query
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