Invention Application
- Patent Title: SEMICONDUCTOR PROCESS OF FORMING METAL GATES WITH DIFFERENT THRESHOLD VOLTAGES AND SEMICONDUCTOR STRUCTURE THEREOF
- Patent Title (中): 形成具有不同阈值电压的金属栅的半导体工艺及其半导体结构
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Application No.: US14683128Application Date: 2015-04-09
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Publication No.: US20160268259A1Publication Date: 2016-09-15
- Inventor: Ching-Yun Chang , Chi-Mao Hsu , Wei-Ming Hsiao , Nien-Ting Ho , Kuo-Chih Lai
- Applicant: UNITED MICROELECTRONICS CORP.
- Priority: TW104107634 20150310
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8234 ; H01L21/285 ; H01L29/49 ; H01L21/28
Abstract:
A semiconductor process of forming metal gates with different threshold voltages includes the following steps. A substrate having a first area and a second area is provided. A dielectric layer and a first work function layer are sequentially formed on the substrate of the first area and the second area. A second work function layer is directly formed on the first work function layer of the first area. A third work function layer is directly formed on the first work function layer of the second area, where the third work function layer is different from the second work function layer. The present invention also provides a semiconductor structure formed by said semiconductor process.
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