发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US14870377申请日: 2015-09-30
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公开(公告)号: US20160218076A1公开(公告)日: 2016-07-28
- 发明人: Nobuto MANAGAKI , Hiroshi YAMADA
- 申请人: Kabushiki Kaisha Toshiba
- 申请人地址: JP Minato-ku
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2015-012259 20150126
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L23/522 ; H01L21/48 ; H01L23/538
摘要:
According to one embodiment, a semiconductor device includes a first conductive portion, a second conductive portion, a first layer, and a second layer. The first conductive portion includes a first end portion and a first extending portion. The first extending portion extends in a first direction. The length of the first extending portion in a second direction is shorter than a length of at least a part of the first end portion in the second direction. The first layer includes multiple semiconductor chips, multiple passive chip components, and a resin. The first extending portion includes a first portion and a second portion. The first layer is provided around the first portion. The first layer expands along a first plane. The first plane intersects the first direction. The second layer includes a first multilayer wiring. The second layer expands along a second plane intersecting the first direction.
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