发明申请
- 专利标题： LARGE SCALE AND THICKNESS-MODULATED MoS2 NANOSHEETS
- 专利标题（中）： 大规模和厚度调制的MoS2纳米片
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申请号： US14868428申请日： 2015-09-29
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公开(公告)号： US20160093491A1公开(公告)日： 2016-03-31
- 发明人: Wonbong Choi , Nitin Choudhary
- 申请人： University of North Texas
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/786 ; H01L29/66
摘要：
The invention is for fabricating large-area, thickness-modulated MoS2, varying from single to few layer MoS2 films on various substrates using a combination of magnetron sputtering followed by chemical vapor deposition. The thickness dependent energy bandgap engineering and surface induced polarity change is disclosed.
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