Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14930628Application Date: 2015-11-02
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Publication No.: US20160056245A1Publication Date: 2016-02-25
- Inventor: YUSUKE KINOSHITA , SATOSHI TAMURA , TETSUZO UEDA
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Priority: JP2013-110034 20130524
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L29/66 ; H01L29/808
Abstract:
A semiconductor device includes: a channel layer which is made of InpAlqGa1-p-qN (0≦p+q≦1, 0≦p, and 0≦q); a barrier layer which is formed on the channel layer and is made of InrAlsGa1-r-sN (0≦r+s≦1, 0≦r) having a bandgap larger than that of the channel layer; a diffusion suppression layer which is selectively formed on the barrier layer and is made of IntAluGa1-t-uN (0≦t+u≦1, 0≦t, and s>u); a p-type conductive layer which is formed on the diffusion suppression layer and is made of InxAlyGa1-x-yN (0≦x+y≦1, 0≦y) having p-type conductivity; and a gate electrode which is formed on the p-type conductive layer.
Public/Granted literature
- US09837496B2 Semiconductor device and method for manufacturing same Public/Granted day:2017-12-05
Information query
IPC分类:
