发明申请
- 专利标题: Bump Structure and Method of Forming Same
- 专利标题(中): 凸块结构及其形成方法
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申请号: US14828147申请日: 2015-08-17
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公开(公告)号: US20150357301A1公开(公告)日: 2015-12-10
- 发明人: Guan-Yu Chen , Yu-Wei Lin , Yu-Jen Tseng , Tin-Hao Kuo , Chen-Shien Chen
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号: H01L23/00
- IPC分类号: H01L23/00
摘要:
An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal bump on the under bump metallurgy feature, and a substrate trace on a substrate, the substrate trace coupled to the metal bump through a solder joint and intermetallic compounds, a ratio of a first cross sectional area of the intermetallic compounds to a second cross sectional area of the solder joint greater than forty percent.
公开/授权文献
- US09966346B2 Bump structure and method of forming same 公开/授权日:2018-05-08
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