In one embodiment, an integrated circuit with a signal-processing region is disclosed. The integrated circuit comprises a silicon-on-insulator die singulated from a silicon-on-insulator wafer. The silicon on insulator die comprises an active layer, an insulator layer, a substrate, and a strengthening layer. The substrate consists of an excavated substrate region, and a support region, the support region is in contact with the insulator layer. The excavated region covers a majority of the signal-processing region of the integrated circuit.