Invention Application
- Patent Title: Method And Structure For Resistive Switching Random Access Memory With High Reliable And High Density
- Patent Title (中): 高可靠，高密度电阻式开关随机存取存储器的方法与结构
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Application No.: US14697849Application Date: 2015-04-28
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Publication No.: US20150235698A1Publication Date: 2015-08-20
- Inventor: Chun-Yang Tsai , Yu-Wei Ting , Kuo-Ching Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY., LTD.
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01L27/24 ; H01L45/00
Abstract:
The present disclosure provides a resistive random access memory (RRAM) structure. The RRAM structure includes a bottom electrode on a substrate; a resistive material layer on the bottom electrode, the resistive material layer having filament features with a filament ratio greater than about 0.5; and a top electrode on the resistive material layer.
Public/Granted literature
- US09286979B2 Method and structure for resistive switching random access memory with high reliable and high density Public/Granted day:2016-03-15
Information query
