Invention Application
US20150222092A1 III-V PHOTONIC CRYSTAL MICROLASER BONDED ON SILICON-ON-INSULATOR
有权
结合在绝缘体上的III-V光子晶体微晶硅
- Patent Title: III-V PHOTONIC CRYSTAL MICROLASER BONDED ON SILICON-ON-INSULATOR
- Patent Title (中): 结合在绝缘体上的III-V光子晶体微晶硅
-
Application No.: US14690198Application Date: 2015-04-17
-
Publication No.: US20150222092A1Publication Date: 2015-08-06
- Inventor: Seheon KIM , William DOS SANTOS FEGADOLLI , Axel SCHERER
- Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY
- Main IPC: H01S5/227
- IPC: H01S5/227 ; H01S5/20 ; H01S5/22 ; H01S5/30 ; H01S5/10
Abstract:
Novel methods and systems for miniaturized lasers are described. A photonic crystal is bonded to a silicon-on-insulator wafer. The photonic crystal includes air-holes and can include a waveguide which couples the laser output to a silicon waveguide.
Public/Granted literature
- US09214787B2 III-V photonic crystal microlaser bonded on silicon-on-insulator Public/Granted day:2015-12-15
Information query
