发明申请
- 专利标题： Immunity of Phase Change Material to Disturb in the Amorphous Phase
- 专利标题（中）： 相变材料在无定形相中干扰的抗扰度
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申请号： US14672332申请日： 2015-03-30
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公开(公告)号： US20150206581A1公开(公告)日： 2015-07-23
- 发明人: George A. Gordon , Semyon D. Savransky , Ward D. Parkinson , Sergey Kostylev , James Reed , Tyler A. Lowrey , Ilya V. Karpov , Gianpaolo Spadini
- 申请人： Ovonyx, Inc.
- 主分类号： G11C13/00
- IPC分类号： G11C13/00 ; G11C11/56
摘要：
Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
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