Invention Application
- Patent Title: Magnetoresistance Element With Improved Response to Magnetic Fields
- Patent Title (中): 具有改善磁场响应的磁阻元件
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Application No.: US14452783Application Date: 2014-08-06
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Publication No.: US20150194597A1Publication Date: 2015-07-09
- Inventor: Claude Fermon , Myriam Pannetier-Lecoeur , Marie-Claire Cyrille , Cyril Dressler , Paolo Campiglio
- Applicant: Allegro MicroSystems, LLC
- Applicant Address: US MA Worcester FR Paris Cedex
- Assignee: ALLEGRO MICROSYSTEMS, LLC,COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: ALLEGRO MICROSYSTEMS, LLC,COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: US MA Worcester FR Paris Cedex
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/12 ; H01L43/10 ; H01L43/02
Abstract:
A magnetoresistance element has a double pinned arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.
Public/Granted literature
- US09529060B2 Magnetoresistance element with improved response to magnetic fields Public/Granted day:2016-12-27
Information query
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