Invention Application
US20150194510A1 SELF-ALIGNED EMITTER-BASE-COLLECTOR BIPOLAR JUNCTION TRANSISTORS WITH A SINGLE CRYSTAL RAISED EXTRINSIC BASE
有权
具有单晶提升极限基的自对准发射极 - 基极收集器双极晶体管
- Patent Title: SELF-ALIGNED EMITTER-BASE-COLLECTOR BIPOLAR JUNCTION TRANSISTORS WITH A SINGLE CRYSTAL RAISED EXTRINSIC BASE
- Patent Title (中): 具有单晶提升极限基的自对准发射极 - 基极收集器双极晶体管
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Application No.: US14151225Application Date: 2014-01-09
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Publication No.: US20150194510A1Publication Date: 2015-07-09
- Inventor: Renata Camillo-Castillo , Peng Cheng , Vibhor Jain , Qizhi Liu , John J. Pekarik
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Main IPC: H01L29/73
- IPC: H01L29/73 ; H01L29/10 ; H01L29/08 ; H01L29/66
Abstract:
Fabrication methods, device structures, and design structures for a bipolar junction transistor. An intrinsic base layer is formed on a semiconductor substrate, an etch stop layer is formed on the intrinsic base layer, and an extrinsic base layer is formed on the etch stop layer. A trench is formed that penetrates through the extrinsic base layer to the etch stop layer. The trench is formed by etching the extrinsic base layer selective to the etch stop layer. The first trench is extended through the etch stop layer to the intrinsic base layer by etching the etch stop layer selective to the intrinsic base layer. After the trench is extended through the etch stop layer, an emitter is formed using the trench.
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