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发明申请
US20150170784A1 ELECTRICALLY CONDUCTING COMPOSITES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME 有权
导电复合材料，其制造方法及其包含的物品

ELECTRICALLY CONDUCTING COMPOSITES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME
摘要：
Disclosed herein is a composition comprising a regioregular polyalkylthiophene and/or a regioregular poly[2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene]; and a metallocene; where the metallocene is present in an amount of greater than 75 wt %, based on the total weight of the composition; where the charge mobility is increased by a factor of 3 or more over compositions having 50 wt % of ferrocene or less with the remainder being a regioregular polyalkylthiophene and/or a regioregular poly[2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene]. Disclosed herein too is a method of manufacturing a thin film comprising dissolving a regioregular polyalkylthiophene and/or a regioregular poly[2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene] in a solvent to form a solution; dissolving a metallocene in the solution; where the metallocene is present in an amount of 75 wt % or greater based on the total weight of the ferrocene and the regioregular polyalkylthiophene and/or the regioregular poly[2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene]; disposing the solution on a substrate; and annealing the substrate.
摘要（中）：

本文公开了包含区域性多烷基噻吩和/或区域性聚[2,5-双（3-烷基噻吩-2-基）噻吩并（3,2-b）噻吩]的组合物。 和茂金属; 其中基于组合物的总重量，茂金属以大于75重量％的量存在; 其中电荷迁移率在具有50重量％二茂铁或更少的组合物的情况下增加3倍或更多，其余为区域性多烷基噻吩和/或区域性聚[2,5-双（3-烷基噻吩-2-基） ）噻吩并（3,2-b）噻吩]。 本文还公开了一种制造薄膜的方法，其包括将溶解有约数量的聚烷基噻吩和/或区域性聚[2,5-双（3-烷基噻吩-2-基）噻吩并（3,2-b）噻吩]溶解在溶剂中 形成解决方案; 将金属茂溶解在溶液中; 其中金属茂以二茂铁和区域性多烷基噻吩和/或区域性聚[2,5-双（3-烷基噻吩-2-基）噻吩并（3）的总重量）的总重量的75重量％或更大的量存在 ，2-b）噻吩]; 将溶液置于基材上; 并退火衬底。

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