Invention Application
US20150084187A1 METHODS OF FORMING HYDROPHOBIC SURFACES ON SEMICONDUCTOR DEVICE STRUCTURES, METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES, AND SEMICONDUCTOR DEVICE STRUCTURES
审中-公开
在半导体器件结构上形成疏水表面的方法，形成半导体器件结构的方法和半导体器件结构
- Patent Title: METHODS OF FORMING HYDROPHOBIC SURFACES ON SEMICONDUCTOR DEVICE STRUCTURES, METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES, AND SEMICONDUCTOR DEVICE STRUCTURES
- Patent Title (中): 在半导体器件结构上形成疏水表面的方法，形成半导体器件结构的方法和半导体器件结构
-
Application No.: US14558908Application Date: 2014-12-03
-
Publication No.: US20150084187A1Publication Date: 2015-03-26
- Inventor: Ian C. Laboriante , Prashant Raghu
- Applicant: Micron Technology, Inc.
- Main IPC: H01L23/00
- IPC: H01L23/00
Abstract:
A method of forming a hydrophobic surface on a semiconductor device structure. The method comprises forming at least one structure having at least one exposed surface comprising titanium atoms. The at least one exposed surface of at least one structure is contacted with at least one of an organo-phosphonic acid and an organo-phosphoric acid to form a material having a hydrophobic surface on the at least one exposed surface of the least one structure. A method of forming a semiconductor device structure and a semiconductor device structure are also described.
Information query
IPC分类:
