发明申请
- 专利标题: ION TO NEUTRAL CONTROL FOR WAFER PROCESSING WITH DUAL PLASMA SOURCE REACTOR
- 专利标题(中): 使用双等离子体源反应器进行中和控制
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申请号: US14033241申请日: 2013-09-20
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公开(公告)号: US20150083582A1公开(公告)日: 2015-03-26
- 发明人: Rajinder Dhindsa , Sang Ki Nam , Alexei Marakhtanov , Eric A. Hudson
- 申请人: Lam Research Corporation
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 主分类号: H01L21/67
- IPC分类号: H01L21/67 ; H01L21/3065
摘要:
The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material.
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