Invention Application
- Patent Title: MEMS VARIABLE CAPACITOR WITH ENHANCED RF PERFORMANCE
- Patent Title (中): 具有增强射频性能的MEMS可变电容器
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Application No.: US14240654Application Date: 2012-09-04
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Publication No.: US20140340814A1Publication Date: 2014-11-20
- Inventor: Robertus Petrus Van Kampen , Anartz Unamuno , Richard L. Knipe , Vikram Joshi , Roberto Gaddi , Toshiyuki Nagata
- Applicant: Robertus Petrus Van Kampen , Anartz Unamuno , Richard L. Knipe , Vikram Joshi , Roberto Gaddi , Toshiyuki Nagata
- Applicant Address: US CA San Jose
- Assignee: CAVENDISH KINETICS, INC.
- Current Assignee: CAVENDISH KINETICS, INC.
- Current Assignee Address: US CA San Jose
- International Application: PCT/US12/53702 WO 20120904
- Main IPC: H01G5/16
- IPC: H01G5/16 ; B81C1/00 ; B81B3/00
Abstract:
In a MEMS device, the manner in which the membrane lands over the RF electrode can affect device performance. Bumps or stoppers placed over the RF electrode can be used to control the landing of the membrane and thus, the capacitance of the MEMS device. The shape and location of the bumps or stoppers can be tailored to ensure proper landing of the membrane, even when over-voltage is applied. Additionally, bumps or stoppers may be applied on the membrane itself to control the landing of the membrane on the roof or top electrode of the MEMS device.
Public/Granted literature
- US09589731B2 MEMS variable capacitor with enhanced RF performance Public/Granted day:2017-03-07
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