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发明申请
US20140322478A1 GAS BARRIER FILM AND ELECTRONIC APPARATUS 有权
气体阻隔膜和电子设备

  • 专利标题： GAS BARRIER FILM AND ELECTRONIC APPARATUS
  • 专利标题（中）： 气体阻隔膜和电子设备
  • 申请号： US14360468
    申请日： 2012-11-16
  • 公开(公告)号： US20140322478A1
    公开(公告)日： 2014-10-30
  • 发明人: Takahiro Mori
  • 申请人： Konica Minolta, Inc.
  • 优先权： JP2011-255660 20111124
  • 国际申请： PCT/JP2012/079732 WO 20121116
  • 主分类号： H01L51/52
  • IPC分类号： H01L51/52 ;  H05K5/06
GAS BARRIER FILM AND ELECTRONIC APPARATUS
摘要：
A gas barrier film (10) that comprises a gas barrier layer (14), which is obtained by irradiating a layer that contains a polysilazane with vacuum ultraviolet light, on a base (11) is formed to contain a compound (A) that satisfies all of the conditions (a), (b) and (c) described below in an amount within the range from 1% by mass to 40% by mass (inclusive) relative to the total mass of the gas barrier layer. (a) The compound (A) has an Si—O bond and an organic group that is directly bonded to Si. (b) The compound (A) has an Si—H group or an Si—OH group. (c) The compound (A) has a molecular weight of from 90 to 1,200 (inclusive).
摘要（中）：

形成包含通过用真空紫外线照射含有聚硅氮烷的层而在基材（11）上照射的阻气层（14）的阻气膜（10），其含有满足下述 以下所述的所有条件（a），（b）和（c）相对于气体阻隔层的总质量为1质量％〜40质量％ （a）化合物（A）具有Si-O键和与Si直接结合的有机基团。 （b）化合物（A）具有Si-H基或Si-OH基。 （c）化合物（A）的分子量为90〜1200（含）。

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