A semiconductor device comprises a substrate, a through-silicon via (TSV) penetrating the substrate, at least one first interconnect structure traversing the TSV from the top and dividing a region right above the TSV into several sub-regions and being configured for interconnect routing of an active device and a plurality of second interconnect structures occupying the sub-regions right above the TSV and being configured for electrically coupling the TSV to a higher-level interconnect.