Invention Application
US20140252477A1 FinFET with an Asymmetric Source/Drain Structure and Method of Making Same
有权
具有不对称源极/漏极结构的FinFET及其制造方法
- Patent Title: FinFET with an Asymmetric Source/Drain Structure and Method of Making Same
- Patent Title (中): 具有不对称源极/漏极结构的FinFET及其制造方法
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Application No.: US13790814Application Date: 2013-03-08
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Publication No.: US20140252477A1Publication Date: 2014-09-11
- Inventor: Hsiang-Jen Tseng , Ting-Wei Chiang , Wei-Yu Chen , Kuo-Nan Yang , Ming-Hsiang Song , Ta-Pen Guo
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
Embodiments of the present disclosure are a semiconductor device, a FinFET device, and a method of forming a FinFET device. An embodiment is a semiconductor device comprising a first semiconductor fin extending above a substrate, a first source region on the first semiconductor fin, and a first drain region on the first semiconductor fin. The first source region has a first width and the first drain region has a second width with the second width being different than the first width.
Public/Granted literature
- US09231106B2 FinFET with an asymmetric source/drain structure and method of making same Public/Granted day:2016-01-05
Information query
IPC分类:
