发明申请
- 专利标题: Rotated STI Diode on FinFET Technology
- 专利标题(中): FinFET技术中的旋转STI二极管
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申请号: US13789909申请日: 2013-03-08
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公开(公告)号: US20140252476A1公开(公告)日: 2014-09-11
- 发明人: Sun-Jay Chang , Ming-Hsiang Song , Jen-Chou Tseng , Wun-Jie Lin , Bo-Ting Chen
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号: H01L23/60
- IPC分类号: H01L23/60
摘要:
A diode includes a first plurality of combo fins having lengthwise directions parallel to a first direction, wherein the first plurality of combo fins comprises portions of a first conductivity type. The diodes further includes a second plurality of combo fins having lengthwise directions parallel to the first direction, wherein the second plurality of combo fins includes portions of a second conductivity type opposite the first conductivity type. An isolation region is located between the first plurality of combo fins and the second plurality of combo fins. The first and the second plurality of combo fins form a cathode and an anode of the diode. The diode is configured to have a current flowing in a second direction perpendicular to the first direction, with the current flowing between the anode and the cathode.
公开/授权文献
- US09318621B2 Rotated STI diode on FinFET technology 公开/授权日:2016-04-19
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