In one aspect, the invention provides a method for making a multi-state memory resistor device. The method comprises providing a convertible component and inducing multiple state-dependent resistances on the convertible component to provide a multi-state memory resistor device. The convertible component is characterized by at least one of packing density, applied pressure, temperature, contact area or combinations thereof. The resistance from the multiple state-dependent resistances of the multi-state memory resistor device is a function of maximum current applied across the convertible component. In another aspect, the invention provides a multi-state memory resistor device comprising a convertible component, wherein the convertible component converts into a multi state memory resistor device having multiple state-dependent resistances when induced with a maximum current across the convertible component.