Invention Application
US20140148007A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
制造半导体器件的方法

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
A semiconductor device includes a substrate having a first side and a second side such that the first and second sides face each other, a through via plug penetrating the substrate, an insulating film liner, and an antipollution film. The insulating film liner is between the through via plug and the substrate and the insulating film liner has a recessed surface with respect to the second side. The antipollution film covers the second side and the antipollution film is on the recessed surface and between the through via plug and the substrate.
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