发明申请
- 专利标题： ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD
- 专利标题（中）： 离子植入装置和离子植入方法
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申请号： US14077746申请日： 2013-11-12
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公开(公告)号： US20140134833A1公开(公告)日： 2014-05-15
- 发明人: Mitsukuni Tsukihara , Mitsuaki Kabasawa
- 申请人： SEN Corporation
- 申请人地址： JP Tokyo
- 专利权人： SEN CORPORATION
- 当前专利权人： SEN CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2012-249662 20121113
- 主分类号： H01L21/265
- IPC分类号： H01L21/265
摘要：
An ion implantation apparatus includes a beamline device for transporting ions from an ion source to an implantation processing chamber. The implantation processing chamber includes a workpiece holder for mechanically scanning a workpiece with respect to a beam irradiation region. The beamline device may be operated under a first implantation setting configuration suitable for transport of a low energy/high current beam for high-dose implantation into the workpiece, or a second implantation setting configuration suitable for transport of a high energy/low current beam for low-dose implantation into the workpiece. A beam center trajectory being a reference in a beamline is equal from the ion source to the implantation processing chamber in the first implantation setting configuration and the second implantation setting configuration.
公开/授权文献
- US09208996B2 Ion implantation apparatus and ion implantation method 公开/授权日：2015-12-08
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