Invention Application
- Patent Title: Metal Bump and Method of Manufacturing Same
- Patent Title (中): 金属凸块及其制造方法相同
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Application No.: US13904885Application Date: 2013-05-29
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Publication No.: US20140077365A1Publication Date: 2014-03-20
- Inventor: Yen-Liang Lin , Yu-Jen Tseng , Chang-Chia Huang , Tin-Hao Kuo , Chen-Shien Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/768

Abstract:
An embodiment bump structure includes a contact element formed on a substrate, a passivation layer overlying the substrate, the passivation layer having a passivation opening exposing the contact element a polyimide layer overlying the passivation layer, the polyimide layer having a polyimide opening exposing the contact element an under bump metallurgy (UMB) feature electrically coupled to the contact element, the under bump metallurgy feature having a UBM width, and a copper pillar on the under bump metallurgy feature, a distal end of the copper pillar having a pillar width, the UBM width greater than the pillar width.
Public/Granted literature
- US09105530B2 Conductive contacts having varying widths and method of manufacturing same Public/Granted day:2015-08-11
Information query
IPC分类: