发明申请
- 专利标题: STATE-MONITORING MEMORY ELEMENT
- 专利标题(中): 状态监测记忆元素
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申请号: US13915464申请日: 2013-06-11
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公开(公告)号: US20130336081A1公开(公告)日: 2013-12-19
- 发明人: Michael Sheets , Timothy J. Williams
- 申请人: Cypress Semiconductor Corporation
- 主分类号: G11C5/14
- IPC分类号: G11C5/14
摘要:
Embodiments of the invention relate to a state-monitoring memory element. The state-monitoring memory element may have a reduced ability to retain a logic state than other regular memory elements on an IC. Thus, if the state-monitoring memory elements fails or loses state during testing, it may be a good indicator that the IC's state retention may be in jeopardy, possibly requiring the IC to be reset. The state-monitoring memory element may be implemented by degrading an input voltage supply to the state-monitoring memory element across a diode and/or a transistor. One or more current sources may be used to stress the state-monitoring memory element. A logic analyzer may be used to analyze the integrity of the state-monitoring memory element and trigger appropriate actions in the IC, e.g., reset, halt, remove power, interrupt, responsive to detecting a failure in the state-monitoring memory element. Multiple state-monitoring memory elements may be distributed in different locations on the IC for better coverage.
公开/授权文献
- US08705309B2 State-monitoring memory element 公开/授权日:2014-04-22
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