Invention Application
- Patent Title: Semiconductor Device Channel System and Method
- Patent Title (中): 半导体器件通道系统和方法
-
Application No.: US13444695Application Date: 2012-04-11
-
Publication No.: US20130270607A1Publication Date: 2013-10-17
- Inventor: Gerben Doornbos , Krishna Kumar Bhuwalka , Matthias Passlack
- Applicant: Gerben Doornbos , Krishna Kumar Bhuwalka , Matthias Passlack
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L21/336 ; H01L29/78
Abstract:
A system and method for a channel region is disclosed. An embodiment comprises a channel region with multiple bi-layers comprising alternating complementary materials such as layers of InAs and layers of GaSb. The alternating layers of complementary materials provide desirable band gap characteristics for the channel region as a whole that individual layers of material may not.
Public/Granted literature
- US09735239B2 Semiconductor device channel system and method Public/Granted day:2017-08-15
Information query
IPC分类:
