Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件
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Application No.: US13860879Application Date: 2013-04-11
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Publication No.: US20130270554A1Publication Date: 2013-10-17
- Inventor: Masatoshi YOKOYAMA , Tsutomu MURAKAWA , Kenichi OKAZAKI , Masayuki SAKAKURA , Takuya MATSUO , Yosuke KANZAKI , Hiroshi MATSUKIZONO , Yoshitaka YAMAMOTO
- Applicant: Masatoshi YOKOYAMA , Tsutomu MURAKAWA , Kenichi OKAZAKI , Masayuki SAKAKURA , Takuya MATSUO , Yosuke KANZAKI , Hiroshi MATSUKIZONO , Yoshitaka YAMAMOTO
- Priority: JP2012-093513 20120417
- Main IPC: H01L29/786
- IPC: H01L29/786
Abstract:
The semiconductor conductor device includes a gate electrode 106, an oxide semiconductor film 110, a source electrode 114a and a drain electrode 114b, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface 214a of the source electrode and a second side surface 214b of the drain electrode opposite to the first side surface 214a. The oxide semiconductor film has a side surface which overlaps with the gate electrode, which has a first high resistance region positioned between a first region 206a that is the nearest to one end 314a of the first side surface 214a and a second region 206b that is the nearest to one end 314b of the second side surface 214b. The first high resistance region has a corrugated side surface or the like.
Public/Granted literature
- US08785926B2 Semiconductor device Public/Granted day:2014-07-22
Information query
IPC分类:
