Invention Application
- Patent Title: VARIABLE RESISTANCE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Patent Title (中): 可变电阻存储器件及其制造方法
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Application No.: US13619653Application Date: 2012-09-14
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Publication No.: US20130248806A1Publication Date: 2013-09-26
- Inventor: Choon-Kun RYU
- Applicant: Choon-Kun RYU
- Priority: KR10-2012-0030036 20120323
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A variable resistance memory device includes a first electrode, a second electrode, a first variable resistance layer formed over the first electrode and including at least two kinds of metal oxides, and a second variable resistance layer interposed between the first variable resistance layer and the second electrode and including a metal oxide.
Information query
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