发明申请
- 专利标题： METHOD FOR FABRICATING CAPACITOR WITH HIGH ASPECT RATIO
- 专利标题（中）： 高比例电容器制作方法
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申请号： US13494400申请日： 2012-06-12
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公开(公告)号： US20130244394A1公开(公告)日： 2013-09-19
- 发明人: Beom-Yong KIM , Kee-Jeung LEE , Yun-Hyuck JI , Seung-Mi LEE , Jae-Hyoung KOO , Kwan-Woo DO , Kyung-Woong PARK , Ji-Hoon AHN , Woo-Young PARK
- 申请人： Beom-Yong KIM , Kee-Jeung LEE , Yun-Hyuck JI , Seung-Mi LEE , Jae-Hyoung KOO , Kwan-Woo DO , Kyung-Woong PARK , Ji-Hoon AHN , Woo-Young PARK
- 优先权： KR10-2012-0027823 20120319
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/20
摘要：
A method for fabricating a capacitor includes: forming a first silicon layer over a semiconductor substrate, where the first silicon layer is doped with a dopant; forming an undoped second silicon layer over the first silicon layer; forming an opening by etching the second silicon layer and the first silicon layer; forming a storage node in the opening; and removing the first silicon layer and the second silicon layer.
公开/授权文献
- US08962437B2 Method for fabricating capacitor with high aspect ratio 公开/授权日：2015-02-24
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