发明申请
US20130194865A1 IMPLEMENTING ENHANCED DATA READ FOR MULTI-LEVEL CELL (MLC) MEMORY USING THRESHOLD VOLTAGE-DRIFT OR RESISTANCE DRIFT TOLERANT MOVING BASELINE MEMORY DATA ENCODING
有权
使用阈值电压缓冲或电阻干扰实现增强型数据读取多级存储器（MLC）存储器容错移动基线存储器数据编码
- 专利标题： IMPLEMENTING ENHANCED DATA READ FOR MULTI-LEVEL CELL (MLC) MEMORY USING THRESHOLD VOLTAGE-DRIFT OR RESISTANCE DRIFT TOLERANT MOVING BASELINE MEMORY DATA ENCODING
- 专利标题（中）： 使用阈值电压缓冲或电阻干扰实现增强型数据读取多级存储器（MLC）存储器容错移动基线存储器数据编码
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申请号： US13361918申请日： 2012-01-30
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公开(公告)号： US20130194865A1公开(公告)日： 2013-08-01
- 发明人: Zvonimir Z. Bandic , Luiz M. Franca-Neto , Cyril Guyot , Robert Eugeniu Mateescu
- 申请人： Zvonimir Z. Bandic , Luiz M. Franca-Neto , Cyril Guyot , Robert Eugeniu Mateescu
- 申请人地址： NL Amsterdam
- 专利权人： Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人： Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址： NL Amsterdam
- 主分类号： G11C16/06
- IPC分类号： G11C16/06 ; G11C11/00
摘要：
A method and apparatus are provided for implementing enhanced data read for multi-level cell (MLC) memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A data read back for data written to the MLC memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding is performed, higher voltage and lower voltage levels are compared, and respective data values are identified responsive to the compared higher voltage and lower voltage levels.
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