发明申请
US20130146894A1 BIPOLAR JUNCTION TRANSISTOR STRUCTURE FOR REDUCED CURRENT CROWDING
有权
用于减少电流冲击的双极接头晶体管结构
- 专利标题: BIPOLAR JUNCTION TRANSISTOR STRUCTURE FOR REDUCED CURRENT CROWDING
- 专利标题(中): 用于减少电流冲击的双极接头晶体管结构
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申请号: US13323297申请日: 2011-12-12
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公开(公告)号: US20130146894A1公开(公告)日: 2013-06-13
- 发明人: Lin Cheng , Anant K. Agarwal , Sei-Hyung Ryu
- 申请人: Lin Cheng , Anant K. Agarwal , Sei-Hyung Ryu
- 申请人地址: US NC Durham
- 专利权人: CREE, INC.
- 当前专利权人: CREE, INC.
- 当前专利权人地址: US NC Durham
- 主分类号: H01L29/73
- IPC分类号: H01L29/73 ; H01L21/331 ; H01L29/24
摘要:
The present disclosure relates to a bipolar junction transistor (BJT) structure that significantly reduces current crowding while improving the current gain relative to conventional BJTs. The BJT includes a collector, a base region, and an emitter. The base region is formed over the collector and includes at least one extrinsic base region and an intrinsic base region that extends above the at least one extrinsic base region to provide a mesa. The emitter is formed over the mesa. The BJT may be formed from various material systems, such as the silicon carbide (SiC) material system. In one embodiment, the emitter is formed over the mesa such that essentially none of the emitter is formed over the extrinsic base regions. Typically, but not necessarily, the intrinsic base region is directly laterally adjacent the at least one extrinsic base region.
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