发明申请
- 专利标题： MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 存储器件及其制造方法
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申请号： US13304380申请日： 2011-11-24
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公开(公告)号： US20130134498A1公开(公告)日： 2013-05-30
- 发明人: Shih-Guei Yan , Wen-Jer Tsai , Cheng-Hsien Cheng
- 申请人： Shih-Guei Yan , Wen-Jer Tsai , Cheng-Hsien Cheng
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/28
摘要：
A memory device is described, including a tunnel dielectric layer over a substrate, a gate over the tunnel dielectric layer, at least one charge storage layer between the gate and the tunnel dielectric layer, two doped regions in the substrate beside the gate, and a word line that is disposed on and electrically connected to the gate and has a thickness greater than that of the gate.
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