发明申请
- 专利标题： Split-Channel Transistor and Methods for Forming the Same
- 专利标题（中）： 分体式晶体管及其形成方法
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申请号： US13307738申请日： 2011-11-30
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公开(公告)号： US20130134481A1公开(公告)日： 2013-05-30
- 发明人: Krishna Kumar Bhuwalka , Gerben Doornbos , Matthias Passlack
- 申请人： Krishna Kumar Bhuwalka , Gerben Doornbos , Matthias Passlack
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A Fin Field-Effect Transistor (FinFET) includes a fin, which includes a channel splitter having a first bandgap, and a channel including a first portion and a second portion on opposite sidewalls of the channel splitter. The channel has a second bandgap smaller than the first bandgap. A gate electrode includes a first portion and a second portion on opposite sides of the fin. A gate insulator includes a first portion between the first portion of the gate electrode and the first portion of the channel, and a second portion between the second portion of the gate electrode and the second portion of the channel.
公开/授权文献
- US08604518B2 Split-channel transistor and methods for forming the same 公开/授权日：2013-12-10
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