发明申请
- 专利标题： THIN FILM TRANSISTOR, DISPLAY DEVICE, AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR AND DISPLAY DEVICE
- 专利标题（中）： 薄膜晶体管，显示装置和薄膜晶体管和显示装置的制造方法
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申请号： US13518566申请日： 2010-12-21
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公开(公告)号： US20130105802A1公开(公告)日： 2013-05-02
- 发明人: Yoshiyuki Harumoto , Takeshi Hara , Tohru Okabe , Takeshi Yaneda , Tetsuya Aita , Tsuyoshi Inoue , Michiko Takei
- 申请人： Yoshiyuki Harumoto , Takeshi Hara , Tohru Okabe , Takeshi Yaneda , Tetsuya Aita , Tsuyoshi Inoue , Michiko Takei
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 优先权： JP2009-295190 20091225
- 国际申请： PCT/JP2010/073009 WO 20101221
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L33/08 ; H01L29/66
摘要：
The present invention has an object of providing a TFT in which generation of an OFF current is reduced by an efficient manufacturing method. A thin film transistor 100 according to the present invention has a gate electrode 12 formed on a substrate 10, an insulating layer 14 formed on the gate electrode 12, a microcrystalline amorphous silicon layer 18 and an amorphous silicon layer 16 that are formed on the insulating layer 14, a semiconductor layer 20 containing an impurity formed on the amorphous silicon layer 16, and a source electrode 22A and a drain electrode 22B that are formed on the semiconductor layer 20 containing an impurity. The microcrystalline amorphous silicon layer 18 and the semiconductor layer 20 containing an impurity are connected to each other through the amorphous silicon layer 16 without being in direct contact with each other.
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