Invention Application
US20130094108A1 MAGNETIC SENSOR HAVING CoFeBTa IN PINNED AND FREE LAYER STRUCTURES
有权
具有拼接和自由层结构的CoFeBTa的磁传感器
- Patent Title: MAGNETIC SENSOR HAVING CoFeBTa IN PINNED AND FREE LAYER STRUCTURES
- Patent Title (中): 具有拼接和自由层结构的CoFeBTa的磁传感器
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Application No.: US13275208Application Date: 2011-10-17
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Publication No.: US20130094108A1Publication Date: 2013-04-18
- Inventor: Zheng Gao , Yingfan Xu , Hua Ai Zeng
- Applicant: Zheng Gao , Yingfan Xu , Hua Ai Zeng
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Main IPC: G11B5/127
- IPC: G11B5/127 ; G11B5/33 ; G11B5/60

Abstract:
A magnetic read sensor having improved magnetic performance and robustness. The magnetic sensor includes a magnetic free layer and a magnetic pinned layer structure. The magnetic pinned layer structure includes first and second magnetic layers separated from one another by a non-magnetic coupling layer. The second magnetic layer of the magnetic pinned layer structure includes a layer of CoFeBTa, which prevents the diffusion of atoms and also promotes a desired BCC crystalline grain growth. The magnetic free layer structure can also include such a CoFeBTa layer for further prevention of atomic diffusion and further promotion of a desired BCC grain growth.
Public/Granted literature
- US08817426B2 Magnetic sensor having CoFeBTa in pinned and free layer structures Public/Granted day:2014-08-26
Information query
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