METHOD FOR PROCESSING HIGH-K DIELECTRIC LAYER

Invention Application

US20130072030A1 METHOD FOR PROCESSING HIGH-K DIELECTRIC LAYER 有权

Title translation: 用于处理高K介电层的方法

Please log in to see more content

Patent Title: METHOD FOR PROCESSING HIGH-K DIELECTRIC LAYER
Patent Title (中): 用于处理高K介电层的方法
Application No.: US13235515

Application Date: 2011-09-19
Publication No.: US20130072030A1

Publication Date: 2013-03-21
Inventor: Shao-Wei Wang , Yu-Ren Wang , Chien-Liang Lin , Wen-Yi Teng , Tsuo-Wen Lu , Chih-Chung Chen , Ying-Wei Yen
Applicant: Shao-Wei Wang , Yu-Ren Wang , Chien-Liang Lin , Wen-Yi Teng , Tsuo-Wen Lu , Chih-Chung Chen , Ying-Wei Yen
Main IPC: H01L21/314
IPC: H01L21/314

METHOD FOR PROCESSING HIGH-K DIELECTRIC LAYER

Abstract:

A method for processing a high-k dielectric layer includes the following steps. A semiconductor substrate is provided, and a high-k dielectric layer is formed thereon. The high-k dielectric layer has a crystalline temperature. Subsequently, a first annealing process is performed, and a process temperature of the first annealing process is substantially smaller than the crystalline temperature. A second annealing process is performed, and a process temperature of the second annealing process is substantially larger than the crystalline temperature.

Abstract(Chinese):

一种用于处理高k电介质层的方法包括以下步骤。提供半导体衬底，并且在其上形成高k电介质层。高k电介质层具有结晶温度。随后，进行第一退火处理，并且第一退火工艺的处理温度显着小于结晶温度。进行第二退火处理，第二退火处理的工艺温度显着大于结晶温度。

Public/Granted literature

US08921238B2 Method for processing high-k dielectric layer Public/Granted day:2014-12-30

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/314	......无机层（H01L21/3105，H01L21/32优先）