发明申请
- 专利标题： PLASMA ETCHING METHOD
- 专利标题（中）： 等离子体蚀刻法
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申请号： US13234449申请日： 2011-09-16
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公开(公告)号： US20130071955A1公开(公告)日： 2013-03-21
- 发明人: Hiroki Kintaka , Toshihisa Ozu , Masahiko Takahashi
- 申请人： Hiroki Kintaka , Toshihisa Ozu , Masahiko Takahashi
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L21/66
- IPC分类号： H01L21/66
摘要：
A method for processing a substrate to form a desired pattern by an etching process after forming a mask pattern over the substrate includes the steps of: forming two layers over the substrate; measuring a width of the mask pattern or an etched pattern of one of the two layers; and adjusting a flow rate of any one of HBr and other gases, used in the etching process, based on the measured width. The two layers may include a silicon nitride layer and an organic dielectric layer.
公开/授权文献
- US2614185A Control for fluid pumping and dispensing machines 公开/授权日：1952-10-14
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