发明申请
- 专利标题： INSULATING REGION FOR A SEMICONDUCTOR SUBSTRATE
- 专利标题（中）： 半导体衬底的绝缘区域
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申请号： US13661722申请日： 2012-10-26
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公开(公告)号： US20130049172A1公开(公告)日： 2013-02-28
- 发明人: Nicolas Loubet , Qing Liu , Sanjay C. Mehta , Spyridon Skordas
- 申请人： STMicroelectronics, Inc. , International Business Machines Corporation
- 申请人地址： US NY Armonk US TX Coppell
- 专利权人： International Business Machines Corporation,STMicroelectronics, Inc.
- 当前专利权人： International Business Machines Corporation,STMicroelectronics, Inc.
- 当前专利权人地址： US NY Armonk US TX Coppell
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L21/20
摘要：
An insulating region for a semiconductor wafer and a method of forming same. The insulating region can include a tri-layer structure of silicon oxide, boron nitride and silicon oxide. The insulating region may be used to insulate a semiconductor device layer from an underlying bulk semiconductor substrate. The insulating region can be formed by coating the sides of a very thin cavity with silicon oxide, and filling the remainder of the cavity between the silicon oxide regions with boron nitride.
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