发明申请
- 专利标题： FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 场效应晶体管及其制造方法
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申请号： US13641793申请日： 2011-12-19
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公开(公告)号： US20130032797A1公开(公告)日： 2013-02-07
- 发明人: Koichi Hirano , Shingo Komatsu , Yasuteru Saito , Naoki Ike
- 申请人： Koichi Hirano , Shingo Komatsu , Yasuteru Saito , Naoki Ike
- 优先权： JP2010-290516 20101227
- 国际申请： PCT/JP2011/079979 WO 20111219
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/786
摘要：
The present invention achieves a formation of a metal oxide film of a thin film transistor with a simplified process. The present invention is concerned with a method for manufacturing a field-effect transistor comprising a gate electrode, a source electrode, a drain electrode, a channel layer and a gate insulating layer wherein the channel layer is formed by using a metal salt-containing composition comprising a metal salt, a polyvalent carboxylic acid having a cis-form structure of —C(COOH)═C(COOH)—, an organic solvent and a water wherein a molar ratio of the polyvalent carboxylic acid to the metal salt is in the range of 0.5 to 4.0.
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