发明申请
- 专利标题: THROUGH WAFER VIAS AND METHOD OF MAKING SAME
- 专利标题(中): 通过WAVER VIAS及其制作方法
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申请号: US13604731申请日: 2012-09-06
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公开(公告)号: US20120329219A1公开(公告)日: 2012-12-27
- 发明人: Hanyi Ding , Alvin Jose Joseph , Anthony Kendall Stamper
- 申请人: Hanyi Ding , Alvin Jose Joseph , Anthony Kendall Stamper
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L21/336 ; H01L21/02 ; H01L21/762
摘要:
A method of forming and structure for through wafer vias and signal transmission lines formed of through wafer vias. The method of forming through wafer vias includes forming an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via through a semiconductor substrate having a top surface and an opposite bottom surface, each through wafer via of the array of through wafer vias extending from the top surface of the substrate to the bottom surface of the substrate.
公开/授权文献
- US08518787B2 Through wafer vias and method of making same 公开/授权日:2013-08-27
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