Invention Application
- Patent Title: MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME, AND PHOTOVOLTAIC CELL ELEMENT AND METHOD OF PRODUCING THE SAME
- Patent Title (中): 用于形成半导体基板的钝化膜，用于半导体基板的钝化膜及其制造方法的材料和光电晶体元件及其制造方法
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Application No.: US13480549Application Date: 2012-05-25
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Publication No.: US20120313199A1Publication Date: 2012-12-13
- Inventor: Akihiro Orita , Masato Yoshida , Takeshi Nojiri , Yoichi Machii , Mitsunori Iwamuro , Shuchiro Adachi , Tetsuya Sato , Toru Tanaka
- Applicant: Akihiro Orita , Masato Yoshida , Takeshi Nojiri , Yoichi Machii , Mitsunori Iwamuro , Shuchiro Adachi , Tetsuya Sato , Toru Tanaka
- Assignee: HITACHI CHEMICAL COMPANY, LTD.
- Current Assignee: HITACHI CHEMICAL COMPANY, LTD.
- Priority: JP2011-118493 20110526; JP2011-118494 20110526; JP2011-141068 20110624; JP2012-055809 20120313
- Main IPC: C09D127/12
- IPC: C09D127/12 ; H01L21/312 ; H01L31/0216 ; H01L31/18 ; C08K5/05 ; C09D181/06 ; C08K3/22 ; C08K3/34 ; C08K3/28 ; C08K5/5415 ; H01L29/06 ; C09D125/18
Abstract:
The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.
Public/Granted literature
Information query
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